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Ngspice:
BSIM3: BSIM3 is the latest industry-standard MOSFET model for deep-submicron digital and analog circuit designs from the BSIM Group at the University of California at Berkeley. BSIMSOI: Silicon-On-Insulator (SOI) MOSFET model for SPICE simulation, formulated on top BSIM3 framework. BSIM4: BSIM4 is another model from the BSIM Group at the University of California at Berkeley. This model permit to consider the finite charge-layer thickness that can not be ignored when the gate oxide thickness is vigorously scaled down. HISIM: HiSIM (Hiroshima-university STARC IGFET Model) is a complete MOSFET model for circuit simulation based on the drift-diffusion approximation. |