CMOS Nanometer scaling, Limited!
This leads to higher source-drain leakage currents stemming from the thermal S. Inaba, et al., “High Performance 35nm Gate Length CMOS with NO Oxynitride Gate Substrate-induced Biaxial Stressed Si and Ge Channel MOSFETs,” Proc.
IDDQ Testing
A large static current is thus induced in the inverter. To analyze the fault effects of a break occurring at the gate, drain, or source terminal of a insulating layer, excess well or substrate leakage, are also IDDQ testable
US Patents 7045851 and 7045854 - Nanoparticles in FET gates
In addition, the nanocrystal floating gate 106 should make the device less susceptible to stress-induced leakage current. That is, if an individual nanocrystal becomes shorted to the channel 154, other nanocrystals remain unaffected.
微电子词典
connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共 铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset 力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current （泄）漏电流Level
IEEE IRPS 2006
But, increased gate induced drain leakage (GIDL) degrade data retention time. The retention time of <100> channel directional wafer (CW) was compared to that of <110> CW. Using <100> CW to the finFET DRAM, increased on current and
IC设计专有名词
Common-gate/drain/source connection 共栅/ 漏/ 源连接KzQFFr}+ Common-mode gain 共 模增益Common-mode Indium tin oxide (ITO) 铟锡氧化物Induced channel 感应沟道 a|E r`R Leakage current （泄）漏电流Level shifting 电平移动|/n+hfKEvB
汽车英语词汇
Air leak 漏气 Airless injection 无气喷射 Air line lubricator 气压供油中央润滑系统 Drain hose 排水管 Drain off 放水[放油，放气] Drain oil 放油孔 Drain pan 放油盆 Induced current 感应电流 Induced electric motive force 感应电动势
半导体工厂就是一个化工厂————毒 ?
三)CMP 研磨设备单位（1）机械方面：motor gear 转动时夹伤、gate door 夹伤。 connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/ 结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current （泄）漏电流Level
Dictionary
Gain 增益 Gallium-Arsenide(GaAs) 砷化钾 Gamy ray r 射线 Gate 门、栅、控制极 Gate In-contact mask 接触式掩模 Indium tin oxide (ITO) 铟锡氧化物 Induced 晶格畸变 Leakage current （泄）漏电流 Level shifting 电平移动 Life time 寿命
嵌入式存储器面面观图
eSRAM的漏流包括亚阈漏流、GIDL（Gate Induced Drain Leakage和栅极隧穿电流。在90nm 工艺下，亚阈漏流和GIDL就开始明显增大，在65nm工艺下，栅极的隧穿漏流也将变大。 为了减少漏流，一种办法就是在SRAM单元中使用相对较高的阈值电压Vth。

The n-MOSFET bias impact on the gate-induced drain leakage current
The main sources of these electric fields are the gate–source (Vgs) and drain–source (Vds) voltages. The modelling of the gate-induced drain leakage current
Characterization and Modeling of Gate-Induced-Drain-Leakage
We present measurements of Gate-Induced-Drain-Leak-age at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high
Impact of Gate-Induced Drain Leakage Current on the Tail
tail-mode bits, it is found for the first time that Gate-Induced. Drain Leakage (GIDL) current has a dominant impact. The
Microsoft PowerPoint - long-Channel-4.ppt
Gate Induced Drain Leakage (GIDL) Current. Observation. - it was observed that the excess drain. current exist when gate bias further reduce
ECS EPrints Service - Asymmetric Gate-Induced Drain Leakage and
Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for istors connected in the

Microsoft PowerPoint - long-Channel-4.ppt
Gate Induced Drain Leakage (GIDL) Current. Observation. - it was observed that the excess drain. current exist when gate bias further reduce
ECS EPrints Service - Asymmetric Gate-Induced Drain Leakage and
Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for istors connected in the
ECS EPrints Service - Asymmetric gate induced drain leakage and
Gili, E., Kunz, D., Uchino, T., Hakim, M. M. A., de Groot, C. H., Ashburn, P. and Hall, S. (2006) Asymmetric gate induced drain leakage and body leakage in
Gate-Induced Drain Leakage Currents in Metal Oxide Semiconductor
In this study, gate-induced drain leakage (GIDL) characteristics were studied for different device structures having high-. dielectric as a gate dielectric
Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin
A large component of off-state leakage current is gate-. induced drain leakage (GIDL) current, caused by band-to-. band tunneling in the drain region
GIDL: Gate Induced Drain Leakage
Please anybody explain GIDL: Gate Induced Drain Leakage. Thanks.
Gate-Induced Drain Leakage - What does GIDL stand for? Acronyms
What does GIDL stand for? Definition of Gate-Induced Drain Leakage in the list of acronyms and abbreviations provided by the Free Online Dictionary and
Gate-induced drain leakage current degradation and its time
The effects of channel hot-electron stress on the gate-induced drain leakage current(GIDL) in n-MOSFETs with thin gate oxides have been studied.