Vertically scaled MOSFET gate stacks and junctions: How far are we
Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? However, in practice, when the physical gate length is fixed,
Advanced MOSFET issues
Proper scaling of MOSFET however requires not only a size reduction of the gate length and width. It also requires a reduction of all other dimensions
Frequency characteristics of sub-100 nm double-gate MOSFET
When the side gate voltage is 5 V, the threshold voltage of DG MOSFET with side gate length of 90 nm is about 0.553 V. When the side gate voltage is 2 V,
Frequency characteristics of sub-100 nm double-gate MOSFET for
main gate is fixed to 50 nm. When the side gate voltage is 5 V,. the threshold voltage of DG MOSFET with side gate length of
FinFET scaling to 10 nm gate length
At 55 nm gate length, the subthreshold slopes are 64 mV/dec for n-FET and 68 mV/dec for p-FET, which is very close to the ideal MOSFET behavior(at room