Vertically scaled MOSFET gate stacks and junctions: How far are we
Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? However, in practice, when the physical gate length is fixed,
Advanced MOSFET issues
Proper scaling of MOSFET however requires not only a size reduction of the gate length and width. It also requires a reduction of all other dimensions
Frequency characteristics of sub-100 nm double-gate MOSFET
When the side gate voltage is 5 V, the threshold voltage of DG MOSFET with side gate length of 90 nm is about 0.553 V. When the side gate voltage is 2 V,
Frequency characteristics of sub-100 nm double-gate MOSFET for
main gate is fixed to 50 nm. When the side gate voltage is 5 V,. the threshold voltage of DG MOSFET with side gate length of
FinFET scaling to 10 nm gate length
At 55 nm gate length, the subthreshold slopes are 64 mV/dec for n-FET and 68 mV/dec for p-FET, which is very close to the ideal MOSFET behavior(at room

Advanced MOSFET issues
Proper scaling of MOSFET however requires not only a size reduction of the gate length and width. It also requires a reduction of all other dimensions
Frequency characteristics of sub-100 nm double-gate MOSFET
When the side gate voltage is 5 V, the threshold voltage of DG MOSFET with side gate length of 90 nm is about 0.553 V. When the side gate voltage is 2 V,
Frequency characteristics of sub-100 nm double-gate MOSFET for
main gate is fixed to 50 nm. When the side gate voltage is 5 V,. the threshold voltage of DG MOSFET with side gate length of
FinFET scaling to 10 nm gate length
At 55 nm gate length, the subthreshold slopes are 64 mV/dec for n-FET and 68 mV/dec for p-FET, which is very close to the ideal MOSFET behavior(at room
Fabrication of SOI p-MOSFET with a 35-nm gate length by using PBF
Fabrication of SOI p-MOSFET with a 35-nm gate length by using PBF-SPD process. Won-Ju CHO, Jong-Heon YANG, Chang-Geun AHN, Kiju IM, Jihoon OH, In-Bok BAEK,
Vertically scaled MOSFET gate stacks and junctions: How far are we
Vertically scaled MOSFET gate stacks and junctions: How far are we likely for leading-edge microprocessor chips, the physical gate length is only 60% of
A 20 nm gate-length ultra-thin body p-MOSFET with silicide source
behavior of a 20 nm gate-length, 15 nm wide, SSD MOSFET, with an n. +. polygate. V. t. = −0.7 V. 100 Å of Ti was deposited by sputtering and was reacted
TCAD Modeling and Simulation of Sub-100nm Gate Length Silicon and
Sub-100nm gate length silicon and GaN based SOI n-type MOSFET are modeled and. simulated using ISE-TCAD (now synopsys_sentaurus).